L Change the model parameters and see their effects on Id/Vd, Id/Vg, Id(log)/Vg, threshold vs Length. l Programming can be performed by a very high voltage supply on the gate L Simulation of non-volatile memories such as EPROM, EEPROM and FLASH using double-gate MOS l Erasure of floating gates and removal all electrons. MICROWIND supports MOS models 1, 3 and BSIM4. In the manual, a tutorial on MOS models is given, with details on all parameters. You can also fit the simulations with measurements we made in test-chips fabricated in 0.35, 0.25 and 0.18µm. Change the model parameters and see their effects on Id/Vd, Id/Vg Id(log)/Vg, threshold vs. Some electrons are sufficiently accelerated to pass through the gate oxide by hot tunneling effect.Ī valuable screen to understand the MOS characteristics, with a user interface that designers will like. The programming is performed by a very high voltage supply on the gate (7V in 0.12µm), a 1.2V voltage difference between drain and source. The command "UV exposure" erases floating gates and removes all electrons. The double-gate MOS has been introduced in MICROWIND for the simulation of non-volatile memories such as EPROM, EEPROM and FLASH.
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